21 to 30 of 19,309 Results
Aug 15, 2025 -
JART ECM v1 var
SVG Image - 3.5 MB - SHA-256: 43512b47f9b59bfa5115c31ecd176af8ed90db32194f30370b8b98abde9e3537
[2] Experimentally measured I–V sweeps in red, simulated I–V sweeps in blue: (a) experimentally recorded I–V sweep, (b)
simulated I–V sweep characteristics with all four modifications, (c) only staircase I–V sweep and parameter variation after each
SET and RESET, (d) only stair... |
Aug 15, 2025 -
JART ECM v1 var
Unknown - 16.8 KB - SHA-256: 606b87666352d6eb8141790f1e42232982be8ac3e92169198ed520a88a38847c
JART ECM v1 var |
Aug 15, 2025 - Peter Grünberg Institute (PGI) – Electronic Materials (PGI-7)
Ahmad, Rana Walied; Menzel, Stephan, 2025, "JART v-ECM v1", https://doi.org/10.26165/JUELICH-DATA/NDUPBU, Jülich DATA, V1
A comprehensive, novel and consistent volatile ECM model is proposed that is derived from the nonvolatile physics-based model "JART ECM v1" comprising electrocrystallization, electron-transfer reactions at the interfaces and ionic migration as speed limiting ionic processes. Addi... |
Aug 15, 2025 -
JART v-ECM v1
SVG Image - 996.7 KB - SHA-256: e05d35a6ca3c658a0b666d197f06274eedd3345bb03f215fe47638d111116a64
[1] (a) 30 cycles of measured I-V sweeps of a Ag-HfO2-Pt ECM device stack are shown. A c2c variability is visible.
(b) 30 cycles of simulated I-V sweeps are shown through the usage of the (variability-aware) volatile ECM model.
For both, measurement and simulation, the device... |
Aug 15, 2025 -
JART v-ECM v1
SVG Image - 563.5 KB - SHA-256: e8ced5836ba74af09e38ac51313c2061a7aef7697b7e94c37d2d5f99d4a97bfd
[2] The experimentally measured threshold switching kinetics data points of a Ag-HfO2-Pt ECM device stack together with their d2d variability are displayed in red, whereas the simulated ones with their d2d variability are displayed in blue. |
Aug 15, 2025 -
JART v-ECM v1
SVG Image - 20.9 MB - SHA-256: b8e0c44689a90ae87c7470684765ef9220ff2b618c22ce324442338db61e51b2
[3] (a) The applied voltage signal to a Ag-HfO2-Pt ECM device stack in the measurement and in the simulation in order to investigate the device’s relaxation behavior: The 1 ms programming/write pulse of Vp is followed by a read voltage Vread = 0.1 V. The inset shows that the sign... |
Aug 15, 2025 -
JART v-ECM v1
Unknown - 10.9 KB - SHA-256: 6b8b1f93751a06906990947252b9f60dc833dd5718cc65e6a1362792816b7201
JART ECM v1 volatile |
Aug 15, 2025 - Peter Grünberg Institute (PGI) – Electronic Materials (PGI-7)
Ahmad, Rana Walied; Menzel, Stephan, 2025, "JART v-ECM v1 var", https://doi.org/10.26165/JUELICH-DATA/RMT350, Jülich DATA, V1
A purely physics-based variability-aware compact model of voaltile electrochemical metallization memory (v-ECM) cells is presented. Since this extension consists of several different features allowing for a realistic variability-aware fit, it depicts a unique model comprising phy... |
Aug 15, 2025 -
JART v-ECM v1 var
SVG Image - 996.7 KB - SHA-256: e05d35a6ca3c658a0b666d197f06274eedd3345bb03f215fe47638d111116a64
[1] (a) 30 cycles of measured I-V sweeps of a Ag-HfO2-Pt ECM device stack are shown. A c2c variability is visible. (b) 30 cycles of simulated I-V sweeps are shown through the usage of the variability-aware volatile ECM model. For both, measurement and simulation, the device switc... |
Aug 15, 2025 -
JART v-ECM v1 var
SVG Image - 563.5 KB - SHA-256: e8ced5836ba74af09e38ac51313c2061a7aef7697b7e94c37d2d5f99d4a97bfd
[2] The experimentally measured threshold switching kinetics data points of a Ag-HfO2-Pt ECM device stack together with their d2d variability are displayed in red, whereas the simulated ones with their d2d variability are displayed in blue. |