Peter Grünberg Institut – Quantum Nanoscience (PGI-3)

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1,351 to 1,360 of 2,105 Results

Fig_2-5.txt Nov 3, 2025 - Data used in: Solving the Phase Problem of Diffraction: X-ray Standing Wave Imaging on Bismuthene/SiC(0001) Plain Text - 689 B - SHA-256: 7fcb2abc1829d20f9550e9dc13c051557595634d80710f098ca3e4e7691ab5ce Coherent fractions and positions used for these figures.
Fig_6.txt Nov 3, 2025 - Data used in: Solving the Phase Problem of Diffraction: X-ray Standing Wave Imaging on Bismuthene/SiC(0001) Plain Text - 275.4 KB - SHA-256: a692af2f9720909ee8cef8b371f8f0d174514bd6029aacace09dbe48ff80a513 Calculated data for the phase of the standing wave, the reflectivity and the absorption yields of the bulk species
distributed-injection.zip Sep 26, 2025 - Data used in: Distributed Current Injection into a One-dimensional Ballistic Edge Channel ZIP Archive - 611.9 KB - SHA-256: 8fc31f87a845e5e0f0aa6b73b3dcd887cf9a91dfbf894137aa42f2bf7b9dbbb4 Python code for numerically solving the potential profile over a half-plane with distributed current injection into a 1D ballistic edge channel (see README file), and the output files that contain the solutions presented in the publication “Distributed Current Injection into a On...
Figure_1_ARPES_Precursor_GK-direction.txt Jul 8, 2025 - Data used in: Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface Plain Text - 6.9 MB - SHA-256: fe0faee783c9b39525b351c991f5ee75ff576fcb813229c371283ee9267710cd ARPES intensity of the precursor phase measured along the Г-К direction and used to produce Figure 1.
Figure_1_ARPES_Precursor_GM-direction.txt Jul 8, 2025 - Data used in: Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface Plain Text - 6.9 MB - SHA-256: ba94d8cacfbbc28fd8252a7945ef0d3d9a4190ed069722c236d36b62346555f6 ARPES intensity of the precursor phase measured along the Г-М direction and used to produce Figure 1.
Figure_1_NIXSW-imaging_Precursor.txt Jul 8, 2025 - Data used in: Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface Plain Text - 1.0 KB - SHA-256: 6841c45f9653f00173be5be8e1376f204fb623bf7e30eb03bdf97dc108f304e6 Coherent fractions and coherent positions of the bulk components (Si and C) and Bi of the precursor phase derived from NIXSW measurements with different Bragg reflections and used to construct the atomic-density-distribution maps in Figure 1 d, e, and f.
Figure_2_ARPES_Bismuthene_GK-direction.txt Jul 8, 2025 - Data used in: Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface Plain Text - 6.8 MB - SHA-256: f4975ea559e9caaf0fb1c78c57d38f0e918040b0c241026c1dc12953272240cf ARPES intensity of bismuthene measured along the Г-К direction and used to produce Figure 2.
Figure_2_ARPES_Bismuthene_GM-direction.txt Jul 8, 2025 - Data used in: Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface Plain Text - 6.8 MB - SHA-256: 0b3e0738ada6d82d77dde1fcb7e0f4fc24c04088e66abb926d1991fbfdfb7d23 ARPES intensity of bismuthene measured along the Г-М direction and used to produce Figure 2.
Figure_2_NIXSW-imaging_Bismuthene.txt Jul 8, 2025 - Data used in: Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface Plain Text - 1.1 KB - SHA-256: 67dd9e335af41c7ea36f9380b4cbf9af1d51eb597b925d915ac6baadea86afab Coherent fractions and coherent positions of the bulk components (Si and C) and Bi of bismuthene derived from NIXSW measurements with different Bragg reflections and used to construct the atomic-density-distribution maps in Figure 2 a and b.
Figure_3a_ARPES_4H.txt Jul 8, 2025 - Data used in: Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface Plain Text - 2.0 MB - SHA-256: afdf90e3f14ea5208f409d8ed7dc88197e123c1094f8ab67dda99106da779b49 ARPES intensity of bismuthene on 4H-SiC used to produce Figure 3a.

Fig_2-5.txt

Nov 3, 2025 - Data used in: Solving the Phase Problem of Diffraction: X-ray Standing Wave Imaging on Bismuthene/SiC(0001)

Plain Text - 689 B - SHA-256: 7fcb2abc1829d20f9550e9dc13c051557595634d80710f098ca3e4e7691ab5ce

Coherent fractions and positions used for these figures.

Fig_6.txt

Nov 3, 2025 - Data used in: Solving the Phase Problem of Diffraction: X-ray Standing Wave Imaging on Bismuthene/SiC(0001)

Plain Text - 275.4 KB - SHA-256: a692af2f9720909ee8cef8b371f8f0d174514bd6029aacace09dbe48ff80a513

Calculated data for the phase of the standing wave, the reflectivity and the absorption yields of the bulk species

distributed-injection.zip

Sep 26, 2025 - Data used in: Distributed Current Injection into a One-dimensional Ballistic Edge Channel

ZIP Archive - 611.9 KB - SHA-256: 8fc31f87a845e5e0f0aa6b73b3dcd887cf9a91dfbf894137aa42f2bf7b9dbbb4

Python code for numerically solving the potential profile over a half-plane with distributed current injection into a 1D ballistic edge channel (see README file), and the output files that contain the solutions presented in the publication “Distributed Current Injection into a On...

Figure_1_ARPES_Precursor_GK-direction.txt

Jul 8, 2025 - Data used in: Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface

Plain Text - 6.9 MB - SHA-256: fe0faee783c9b39525b351c991f5ee75ff576fcb813229c371283ee9267710cd

ARPES intensity of the precursor phase measured along the Г-К direction and used to produce Figure 1.

Figure_1_ARPES_Precursor_GM-direction.txt

Jul 8, 2025 - Data used in: Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface

Plain Text - 6.9 MB - SHA-256: ba94d8cacfbbc28fd8252a7945ef0d3d9a4190ed069722c236d36b62346555f6

ARPES intensity of the precursor phase measured along the Г-М direction and used to produce Figure 1.

Figure_1_NIXSW-imaging_Precursor.txt

Jul 8, 2025 - Data used in: Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface

Plain Text - 1.0 KB - SHA-256: 6841c45f9653f00173be5be8e1376f204fb623bf7e30eb03bdf97dc108f304e6

Coherent fractions and coherent positions of the bulk components (Si and C) and Bi of the precursor phase derived from NIXSW measurements with different Bragg reflections and used to construct the atomic-density-distribution maps in Figure 1 d, e, and f.

Figure_2_ARPES_Bismuthene_GK-direction.txt

Jul 8, 2025 - Data used in: Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface

Plain Text - 6.8 MB - SHA-256: f4975ea559e9caaf0fb1c78c57d38f0e918040b0c241026c1dc12953272240cf

ARPES intensity of bismuthene measured along the Г-К direction and used to produce Figure 2.

Figure_2_ARPES_Bismuthene_GM-direction.txt

Jul 8, 2025 - Data used in: Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface

Plain Text - 6.8 MB - SHA-256: 0b3e0738ada6d82d77dde1fcb7e0f4fc24c04088e66abb926d1991fbfdfb7d23

ARPES intensity of bismuthene measured along the Г-М direction and used to produce Figure 2.

Figure_2_NIXSW-imaging_Bismuthene.txt

Jul 8, 2025 - Data used in: Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface

Plain Text - 1.1 KB - SHA-256: 67dd9e335af41c7ea36f9380b4cbf9af1d51eb597b925d915ac6baadea86afab

Coherent fractions and coherent positions of the bulk components (Si and C) and Bi of bismuthene derived from NIXSW measurements with different Bragg reflections and used to construct the atomic-density-distribution maps in Figure 2 a and b.

Figure_3a_ARPES_4H.txt

Jul 8, 2025 - Data used in: Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface

Plain Text - 2.0 MB - SHA-256: afdf90e3f14ea5208f409d8ed7dc88197e123c1094f8ab67dda99106da779b49

ARPES intensity of bismuthene on 4H-SiC used to produce Figure 3a.

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