Peter Grünberg Institut – Quantum Nanoscience (PGI-3)

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891 to 900 of 1,640 Results

Figure_1_NIXSW-imaging_Precursor.txt Jul 8, 2025 - Data used in: Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface Plain Text - 1.0 KB - SHA-256: 6841c45f9653f00173be5be8e1376f204fb623bf7e30eb03bdf97dc108f304e6 Coherent fractions and coherent positions of the bulk components (Si and C) and Bi of the precursor phase derived from NIXSW measurements with different Bragg reflections and used to construct the atomic-density-distribution maps in Figure 1 d, e, and f.
Figure_2_ARPES_Bismuthene_GK-direction.txt Jul 8, 2025 - Data used in: Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface Plain Text - 6.8 MB - SHA-256: f4975ea559e9caaf0fb1c78c57d38f0e918040b0c241026c1dc12953272240cf ARPES intensity of bismuthene measured along the Г-К direction and used to produce Figure 2.
Figure_2_ARPES_Bismuthene_GM-direction.txt Jul 8, 2025 - Data used in: Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface Plain Text - 6.8 MB - SHA-256: 0b3e0738ada6d82d77dde1fcb7e0f4fc24c04088e66abb926d1991fbfdfb7d23 ARPES intensity of bismuthene measured along the Г-М direction and used to produce Figure 2.
Figure_2_NIXSW-imaging_Bismuthene.txt Jul 8, 2025 - Data used in: Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface Plain Text - 1.1 KB - SHA-256: 67dd9e335af41c7ea36f9380b4cbf9af1d51eb597b925d915ac6baadea86afab Coherent fractions and coherent positions of the bulk components (Si and C) and Bi of bismuthene derived from NIXSW measurements with different Bragg reflections and used to construct the atomic-density-distribution maps in Figure 2 a and b.
Figure_3a_ARPES_4H.txt Jul 8, 2025 - Data used in: Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface Plain Text - 2.0 MB - SHA-256: afdf90e3f14ea5208f409d8ed7dc88197e123c1094f8ab67dda99106da779b49 ARPES intensity of bismuthene on 4H-SiC used to produce Figure 3a.
Figure_3b_ARPES_6H.txt Jul 8, 2025 - Data used in: Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface Plain Text - 3.1 MB - SHA-256: cf98faba1334a0f18a77f423f51bdf7e1c33604f210f94ff3a54748cfaea2692 ARPES intensity of bismuthene on 6H-SiC used to produce Figure 3b.
Figure_3c_ARPES_4H+Cs.txt Jul 8, 2025 - Data used in: Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface Plain Text - 2.0 MB - SHA-256: 5034d49b74ad616f038a1242fbe9bc31396eb72f94a866263490b76a2f0f939b ARPES intensity of bismuthene on 4H-SiC with Cs used to produce Figure 3c.
Figure_3d_ARPES_6H+Cs.txt Jul 8, 2025 - Data used in: Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface Plain Text - 2.0 MB - SHA-256: acd3e159b4b14a5504e090cb072b8325358c28bd5f5fba7b20be0775e20e57dc ARPES intensity of bismuthene on 6H-SiC with Cs used to produce Figure 3d.
LEED_Precursor_100eV.bmp Jul 8, 2025 - Data used in: Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface Bitmap Image - 4.1 MB - SHA-256: ca1ee71ac73373529763108d46c257869e0003b37043c01b8573d0b7e97f943b Low-energy electron diffraction pattern of the precursor phase measured with 100 eV electrons.
Figure1.zip Jun 10, 2025 - Data used in: Shear-resistant topology in the quasi-one-dimensional van der Waals material Bi4Br4 ZIP Archive - 13.6 MB - SHA-256: 2d4a51a01e22eaf6c8c914868d482d8251719f8a9212205e3674ebfd04ac7d23 Data and source files for replication of Figure 1

Figure_1_NIXSW-imaging_Precursor.txt

Jul 8, 2025 - Data used in: Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface

Plain Text - 1.0 KB - SHA-256: 6841c45f9653f00173be5be8e1376f204fb623bf7e30eb03bdf97dc108f304e6

Coherent fractions and coherent positions of the bulk components (Si and C) and Bi of the precursor phase derived from NIXSW measurements with different Bragg reflections and used to construct the atomic-density-distribution maps in Figure 1 d, e, and f.

Figure_2_ARPES_Bismuthene_GK-direction.txt

Jul 8, 2025 - Data used in: Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface

Plain Text - 6.8 MB - SHA-256: f4975ea559e9caaf0fb1c78c57d38f0e918040b0c241026c1dc12953272240cf

ARPES intensity of bismuthene measured along the Г-К direction and used to produce Figure 2.

Figure_2_ARPES_Bismuthene_GM-direction.txt

Jul 8, 2025 - Data used in: Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface

Plain Text - 6.8 MB - SHA-256: 0b3e0738ada6d82d77dde1fcb7e0f4fc24c04088e66abb926d1991fbfdfb7d23

ARPES intensity of bismuthene measured along the Г-М direction and used to produce Figure 2.

Figure_2_NIXSW-imaging_Bismuthene.txt

Jul 8, 2025 - Data used in: Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface

Plain Text - 1.1 KB - SHA-256: 67dd9e335af41c7ea36f9380b4cbf9af1d51eb597b925d915ac6baadea86afab

Coherent fractions and coherent positions of the bulk components (Si and C) and Bi of bismuthene derived from NIXSW measurements with different Bragg reflections and used to construct the atomic-density-distribution maps in Figure 2 a and b.

Figure_3a_ARPES_4H.txt

Jul 8, 2025 - Data used in: Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface

Plain Text - 2.0 MB - SHA-256: afdf90e3f14ea5208f409d8ed7dc88197e123c1094f8ab67dda99106da779b49

ARPES intensity of bismuthene on 4H-SiC used to produce Figure 3a.

Figure_3b_ARPES_6H.txt

Jul 8, 2025 - Data used in: Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface

Plain Text - 3.1 MB - SHA-256: cf98faba1334a0f18a77f423f51bdf7e1c33604f210f94ff3a54748cfaea2692

ARPES intensity of bismuthene on 6H-SiC used to produce Figure 3b.

Figure_3c_ARPES_4H+Cs.txt

Jul 8, 2025 - Data used in: Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface

Plain Text - 2.0 MB - SHA-256: 5034d49b74ad616f038a1242fbe9bc31396eb72f94a866263490b76a2f0f939b

ARPES intensity of bismuthene on 4H-SiC with Cs used to produce Figure 3c.

Figure_3d_ARPES_6H+Cs.txt

Jul 8, 2025 - Data used in: Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface

Plain Text - 2.0 MB - SHA-256: acd3e159b4b14a5504e090cb072b8325358c28bd5f5fba7b20be0775e20e57dc

ARPES intensity of bismuthene on 6H-SiC with Cs used to produce Figure 3d.

LEED_Precursor_100eV.bmp

Jul 8, 2025 - Data used in: Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface

Bitmap Image - 4.1 MB - SHA-256: ca1ee71ac73373529763108d46c257869e0003b37043c01b8573d0b7e97f943b

Low-energy electron diffraction pattern of the precursor phase measured with 100 eV electrons.

Figure1.zip

Jun 10, 2025 - Data used in: Shear-resistant topology in the quasi-one-dimensional van der Waals material Bi4Br4

ZIP Archive - 13.6 MB - SHA-256: 2d4a51a01e22eaf6c8c914868d482d8251719f8a9212205e3674ebfd04ac7d23

Data and source files for replication of Figure 1

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