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Feb 7, 2025
Schäpers, Thomas, 2025, "Fabrication and characterization of InAs nanowire-based quantum dot structures utilizing buried bottom gates", https://doi.org/10.26165/JUELICH-DATA/0X7H3S, Jülich DATA, V1
Semiconductor nanowires can be utilized to create quantum dot qubits. The formation of quantum dots is typically achieved by means of bottom gates created by a lift-off process. As an alternative, we fabricated flat buried bottom gate structures by filling etched trenches in a Si... |
Feb 7, 2025 -
Fabrication and characterization of InAs nanowire-based quantum dot structures utilizing buried bottom gates
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Feb 7, 2025 -
Fabrication and characterization of InAs nanowire-based quantum dot structures utilizing buried bottom gates
Fixed Field Text Data - 9.1 KB - SHA-256: 75df0c55dbd7c3ddfb13696d44364d61582a2ceb3b394662e65d0074ce597e7a
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