Jülich Aachen ReRAM Tools (JART)

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31 to 40 of 52 Results

JART OxRelax v1 with runtime.exe Mar 25, 2025 - JART OxRelax Windows Executable - 726.2 MB - SHA-256: dcb0aedac774c5249b886a73c0bc3887fd2be9b1a231dd85c4ff4c86ee1496cd COMSOL App with COMSOL runtime. The file size is significantly larger than without COMSOL runtime.
JART VCM v1b var Mar 25, 2025 Menzel, Stephan; Bengel, Christopher, 2025, "JART VCM v1b var", https://doi.org/10.26165/JUELICH-DATA/FERGKU, Jülich DATA, V1 The JART VCM v1b var model represents an extension of the JART VCM v1b model which additionally considers device-to-device and cycle-to-cycle variability. The ECD can be seen in Fig. 1. The physical equations are the same as in the v1b model. Device-to-device variability is achie...
JART VCM1 compact model_Verilog-A_file.txt Mar 25, 2025 - JART VCM v1b var Plain Text - 9.2 KB - SHA-256: e493dc7ec06a8ce9bd69cac25c717e2bc28e62a11da8f5b41e4ee35b15c873e0
User_Guide_for_the_JART_VCM_v1_Compact_Model.pdf Mar 25, 2025 - JART VCM v1b var Adobe PDF - 7.8 MB - SHA-256: 18d83a6ca29a1bac36f5df30537cbb9dcd347df93236c220aa62bd3833fe695a
JART ECM v1 Mar 25, 2025 Menzel, Stephan; Bengel, Christopher, 2025, "JART ECM v1", https://doi.org/10.26165/JUELICH-DATA/4F3ITW, Jülich DATA, V1 The JART ECM v1 model describes the switching dynamics of Electrochemical Metallization Cells, which are also known as Conductive Bridge RAM (CBRAM) or atomic switches. The model includes the redox-reactions at the metal insulator interfaces, ion hopping transport, and the electr...
Figure1.jpg Mar 25, 2025 - JART ECM v1 JPEG Image - 100.4 KB - SHA-256: e47bd74017eb26c9eeb9f66304cfe0090420a71670ba04caebdc76fc280b8442 Ionic and Electronic process included in the JART ECM v1 model.
JART ECM v1-veriloga.va Mar 25, 2025 - JART ECM v1 Unknown - 11.2 KB - SHA-256: cff0f397eb1db8e6d222f073133c4874991b8238eb044059a87f211c6241cfc8 The Verilog-A code of this model
JART VCM v1 Mar 25, 2025 Menzel, Stephan; Bengel, Christopher, 2025, "JART VCM v1", https://doi.org/10.26165/JUELICH-DATA/TQOP7I, Jülich DATA, V1 Short description: The JART VCM v1 model was developed to simulate the switching characteristics of devices based on the valence change mechanism (also called OxRAM). In this model, the ionic defect concentration (oxygen vacancies) in the disc region close to the active electrode...
Figure1.jpg Mar 25, 2025 - JART VCM v1 JPEG Image - 39.7 KB - SHA-256: 19d125ff33876fe006dd0b31ed1681bcb32031ee2f623cc2b1031811eefa746a Equivalent circuit diagram of the JART VCM v1 model.
Figure2.jpg Mar 25, 2025 - JART VCM v1 JPEG Image - 220.5 KB - SHA-256: b5bdc35559bd4f836c1c8955f2a592caa96fbf332272569cfc19c33bc5b14d57 Highly voltage-dependent characteristic numbers of SET pulse switching, obtained with both experiments and simulations [3]. The simulation differs from the published result in [1] regarding the parameters, the definition of the criteria, and Eqs. (3.5), (3.7) to (3.10) and (3.12)...

JART OxRelax v1 with runtime.exe

Mar 25, 2025 - JART OxRelax

Windows Executable - 726.2 MB - SHA-256: dcb0aedac774c5249b886a73c0bc3887fd2be9b1a231dd85c4ff4c86ee1496cd

COMSOL App with COMSOL runtime. The file size is significantly larger than without COMSOL runtime.

JART VCM v1b var

Mar 25, 2025

Menzel, Stephan; Bengel, Christopher, 2025, "JART VCM v1b var", https://doi.org/10.26165/JUELICH-DATA/FERGKU, Jülich DATA, V1

The JART VCM v1b var model represents an extension of the JART VCM v1b model which additionally considers device-to-device and cycle-to-cycle variability. The ECD can be seen in Fig. 1. The physical equations are the same as in the v1b model. Device-to-device variability is achie...

JART VCM1 compact model_Verilog-A_file.txt

Mar 25, 2025 - JART VCM v1b var

Plain Text - 9.2 KB - SHA-256: e493dc7ec06a8ce9bd69cac25c717e2bc28e62a11da8f5b41e4ee35b15c873e0

User_Guide_for_the_JART_VCM_v1_Compact_Model.pdf

Mar 25, 2025 - JART VCM v1b var

Adobe PDF - 7.8 MB - SHA-256: 18d83a6ca29a1bac36f5df30537cbb9dcd347df93236c220aa62bd3833fe695a

JART ECM v1

Mar 25, 2025

Menzel, Stephan; Bengel, Christopher, 2025, "JART ECM v1", https://doi.org/10.26165/JUELICH-DATA/4F3ITW, Jülich DATA, V1

The JART ECM v1 model describes the switching dynamics of Electrochemical Metallization Cells, which are also known as Conductive Bridge RAM (CBRAM) or atomic switches. The model includes the redox-reactions at the metal insulator interfaces, ion hopping transport, and the electr...

Figure1.jpg

Mar 25, 2025 - JART ECM v1

JPEG Image - 100.4 KB - SHA-256: e47bd74017eb26c9eeb9f66304cfe0090420a71670ba04caebdc76fc280b8442

Ionic and Electronic process included in the JART ECM v1 model.

JART ECM v1-veriloga.va

Mar 25, 2025 - JART ECM v1

Unknown - 11.2 KB - SHA-256: cff0f397eb1db8e6d222f073133c4874991b8238eb044059a87f211c6241cfc8

The Verilog-A code of this model

JART VCM v1

Mar 25, 2025

Menzel, Stephan; Bengel, Christopher, 2025, "JART VCM v1", https://doi.org/10.26165/JUELICH-DATA/TQOP7I, Jülich DATA, V1

Short description: The JART VCM v1 model was developed to simulate the switching characteristics of devices based on the valence change mechanism (also called OxRAM). In this model, the ionic defect concentration (oxygen vacancies) in the disc region close to the active electrode...

Figure1.jpg

Mar 25, 2025 - JART VCM v1

JPEG Image - 39.7 KB - SHA-256: 19d125ff33876fe006dd0b31ed1681bcb32031ee2f623cc2b1031811eefa746a

Equivalent circuit diagram of the JART VCM v1 model.

Figure2.jpg

Mar 25, 2025 - JART VCM v1

JPEG Image - 220.5 KB - SHA-256: b5bdc35559bd4f836c1c8955f2a592caa96fbf332272569cfc19c33bc5b14d57

Highly voltage-dependent characteristic numbers of SET pulse switching, obtained with both experiments and simulations [3]. The simulation differs from the published result in [1] regarding the parameters, the definition of the criteria, and Eqs. (3.5), (3.7) to (3.10) and (3.12)...

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