1 to 10 of 23 Results
Dec 16, 2025 - Jülich Aachen ReRAM Tools (JART)
Brackmann, Leon, 2025, "Replication Data for: NPJ Unconventional Computing Submission "Reliability challenges for resistive random-access memory-based parallel logic computing"", https://doi.org/10.26165/JUELICH-DATA/XKYQVK, Jülich DATA, V1
The dataset contains all raw data and python scripts (.py) for creating the figures Fig. 3 - Fig. 6 in the main manuscript "Reliability challenges for resistive random-access memory-based parallel logic computing" and the Fig. S3 in the corresponding supplementary information. Th... |
Nov 19, 2025
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Oct 30, 2025
Schnieders, Kristoffer; Stasner, Pascal; Bai, Peixuan; Wouters, Dirk; Wiefels, Stefan, 2025, "Read noise variability in thermally oxidized Tantalum oxide-based ReRAM devices", https://doi.org/10.26165/JUELICH-DATA/BO2NPG, Jülich DATA, V2
This dataset contains raw and processed read noise measurements from thermally oxidized TaOx-based VCM devices, supporting the analysis presented in the associated APL publication. The raw data includes 1 s current readout traces recorded after resistive switching. The evaluation... |
Aug 15, 2025 - Jülich Aachen ReRAM Tools (JART)
Ahmad, Rana Walied; Menzel, Stephan, 2025, "JART ECM v1 var", https://doi.org/10.26165/JUELICH-DATA/WHSSZA, Jülich DATA, V1
A purely physics-based variability-aware compact model of electrochemical metallization memory (ECM) cells is presented. Since this extension consists of several different features allowing for a realistic variability-aware fit, it depicts a unique model comprising physics-based,... |
Aug 15, 2025 - Jülich Aachen ReRAM Tools (JART)
Ahmad, Rana Walied; Menzel, Stephan, 2025, "JART v-ECM v1", https://doi.org/10.26165/JUELICH-DATA/NDUPBU, Jülich DATA, V1
A comprehensive, novel and consistent volatile ECM model is proposed that is derived from the nonvolatile physics-based model "JART ECM v1" comprising electrocrystallization, electron-transfer reactions at the interfaces and ionic migration as speed limiting ionic processes. Addi... |
Aug 15, 2025 - Jülich Aachen ReRAM Tools (JART)
Ahmad, Rana Walied; Menzel, Stephan, 2025, "JART v-ECM v1 var", https://doi.org/10.26165/JUELICH-DATA/RMT350, Jülich DATA, V1
A purely physics-based variability-aware compact model of voaltile electrochemical metallization memory (v-ECM) cells is presented. Since this extension consists of several different features allowing for a realistic variability-aware fit, it depicts a unique model comprising phy... |
Menzel, Stephan; Son, Seokki; Schön, Daniel, 2025, "JART VCM Rth", https://doi.org/10.26165/JUELICH-DATA/1HWSUA, Jülich DATA, V1
This model is an extension of the existing JART (Jülich Aachen Resistive Switching Tools) VCM v1b model, by incorporating state-dependent effective thermal resistance (Rth,eff) based on an electro-thermal continuum model. This enables precise modeling of multilevel behavior and i... |
Mar 26, 2025 - Jülich Aachen ReRAM Tools (JART)
Schön, Daniel; Menzel, Stephan, 2025, "JART TC", https://doi.org/10.26165/JUELICH-DATA/AHUQHC, Jülich DATA, V1
Upcoming computing and market-ready storage technologies must not only become more powerful, but also more energy-efficient to meet future challenges. A promising solution are BEOL-integrated RRAM arrays. However, with shrinking feature size, thermal management is becoming increa... |
Menzel, Stephan; Bengel, Christopher, 2025, "JART VCM v1b Readvar", https://doi.org/10.26165/JUELICH-DATA/VCRB1E, Jülich DATA, V1
The JART VCM v1b Readvar model represents a further extension of the JART VCM v1b var model which additionally considers read noise. The equivalent circuit diagram of the JART VCM v1b Readvar model can be seen in Fig. 1 (JART_VCM_v1b_Readvar.jpg) [1]. The read noise is implemente... |
Menzel, Stephan; Bengel, Christopher, 2025, "JART VCM v1 generic", https://doi.org/10.26165/JUELICH-DATA/QELKG7, Jülich DATA, V1
The JART VCM v1 generic model is a special variant of the more general JART VCM v1 model. It provides in total 16 data sets to study the influence of the nonlinearity SL of the switching kinetics and the resistance ratio r on different circuit designs [1]. Four different slopes a... |
