1 to 10 of 56 Results
Jun 11, 2026
Menzel, Stephan, 2026, "JART IBM PCM", https://doi.org/10.26165/JUELICH-DATA/IV3SBF, Jülich DATA, V1
In this work, a compact model for mushroom‐type phase‐change memory devices (JART PCM) is introduced that incorporates the shape and size of the amorphous mark under different programming conditions, and is applicable to both projecting and non‐projecting devices. The model inclu... |
Jun 11, 2026 -
JART IBM PCM
Plain Text - 9.5 KB - SHA-256: 22cb72da73efe69a42aea2876bd79df976967c569e13929e66ad3cdb9d293f17
First version of JART IBM PCM Model in Verilog–A format. |
Dec 16, 2025
Brackmann, Leon, 2025, "Replication Data for: NPJ Unconventional Computing Submission "Reliability challenges for resistive random-access memory-based parallel logic computing"", https://doi.org/10.26165/JUELICH-DATA/XKYQVK, Jülich DATA, V1
The dataset contains all raw data and python scripts (.py) for creating the figures Fig. 3 - Fig. 6 in the main manuscript "Reliability challenges for resistive random-access memory-based parallel logic computing" and the Fig. S3 in the corresponding supplementary information. Th... |
ZIP Archive - 33.7 MB - SHA-256: de84c855351eb993e55594de9116046859ef556f337176f2746031408f5025d9
Data includes Fig. 3 - Fig. 6 of main manuscript and Fig. 3 of supplementary |
Aug 15, 2025
Ahmad, Rana Walied; Menzel, Stephan, 2025, "JART ECM v1 var", https://doi.org/10.26165/JUELICH-DATA/WHSSZA, Jülich DATA, V1
A purely physics-based variability-aware compact model of electrochemical metallization memory (ECM) cells is presented. Since this extension consists of several different features allowing for a realistic variability-aware fit, it depicts a unique model comprising physics-based,... |
Aug 15, 2025 -
JART ECM v1 var
SVG Image - 472.2 KB - SHA-256: f26c2966faa0d6b864005f77e04cf39fd43c806141d3c40295712f5feb5b964c
[1] (a) Experimentally measured and (b) simulatively verified device-to-device variability for SET kinetics analysis.
Simulation also includes the SET kinetics curve obtained by mean parameter values (in black). It shows the first steeper slope from 0.3–3.5 V related to the elec... |
Aug 15, 2025 -
JART ECM v1 var
SVG Image - 3.5 MB - SHA-256: 43512b47f9b59bfa5115c31ecd176af8ed90db32194f30370b8b98abde9e3537
[2] Experimentally measured I–V sweeps in red, simulated I–V sweeps in blue: (a) experimentally recorded I–V sweep, (b)
simulated I–V sweep characteristics with all four modifications, (c) only staircase I–V sweep and parameter variation after each
SET and RESET, (d) only stair... |
Aug 15, 2025 -
JART ECM v1 var
Unknown - 16.8 KB - SHA-256: 606b87666352d6eb8141790f1e42232982be8ac3e92169198ed520a88a38847c
JART ECM v1 var |
Aug 15, 2025
Ahmad, Rana Walied; Menzel, Stephan, 2025, "JART v-ECM v1", https://doi.org/10.26165/JUELICH-DATA/NDUPBU, Jülich DATA, V1
A comprehensive, novel and consistent volatile ECM model is proposed that is derived from the nonvolatile physics-based model "JART ECM v1" comprising electrocrystallization, electron-transfer reactions at the interfaces and ionic migration as speed limiting ionic processes. Addi... |
Aug 15, 2025 -
JART v-ECM v1
SVG Image - 996.7 KB - SHA-256: e05d35a6ca3c658a0b666d197f06274eedd3345bb03f215fe47638d111116a64
[1] (a) 30 cycles of measured I-V sweeps of a Ag-HfO2-Pt ECM device stack are shown. A c2c variability is visible.
(b) 30 cycles of simulated I-V sweeps are shown through the usage of the (variability-aware) volatile ECM model.
For both, measurement and simulation, the device... |

